Principal Scientist – Epitaxial Growth - Montreal (administrative region) - Omniply

    Omniply
    Omniply Montreal (administrative region)

    4 days ago

    Description

    Job Title: Principal Scientist – Epitaxial Growth

    Experience: 2+ years industry experience

    Employment Type: Full-time

    Omniply is a Montreal-based startup with a revolutionary manufacturing technology for making flexible electronics. We are a dynamic team of scientists and engineers, navigating the fast‑paced startup environment to constantly innovate and make an impact in the market. We are currently in the process of commercializing our technology for flexible OLED displays, and at the same time developing next generation of III‑V epitaxial substrates that will be a game‑changer for optical communications, RF, and power electronics.

    Job Description: Omniply is looking for a Principal Scientist for Epitaxial Growth to join the team and lead the development of a new substrate technology for III‑V epitaxial materials towards making RF and power devices and microLEDs. We are looking for a candidate with background in epitaxial growth of III‑Nitride materials, such as GaN, AlN, etc., and experience developing III‑Nitride based devices for RF and power electronics, and/or microLED applications.

    Desired Skills: The ideal candidate will have extensive and relevant experience focused on Metal‑Organic Chemical Vapour Deposition (MOCVD) growth and process optimization of III‑Nitride epitaxial layers. The ideal candidate will also have a deep understanding of epitaxial growth processes, material characterization, inter‑layer strain management, and be familiar with HEMT design for high‑performance RF and Power devices.

    Responsibilities

    • Lead the development and optimization of MOCVD process conditions for different layers in the substrate technology
    • Define strategy for optimization of strain management layers, buffer layers, and device layers
    • Create and maintain intellectual property for Omniply
    • Address manufacturability challenges such as scalability for wafer sizes, deposition time, etc.
    • Identify failure points in epitaxial process and propose risk mitigation pathways
    • Collaborate with academic or industry partners for POC creation and product validation

    Qualifications

    • Ph.D. in Materials Science, Electrical Engineering, Physics, or a related field.
    • 5+ years of hands‑on experience in MOCVD growth, preferably for GaN‑based devices
    • Excellent understanding of epitaxial growth process for III‑N nitride materials, including strain management in the overall device stack
    • Experience with technical problem‑solving and collaborative innovation
    • Proven track record of developing high‑quality epitaxial layers for high‑mobility HEMT devices
    • Ability to drive resolution of issues as part of cross‑functional teams
    • Experience managing customer projects and deliverables
    • Experience in leading and managing multiple projects
    • Self‑motivated towards achieving milestones

    Seniority level

    • Mid‑Senior level

    Employment type

    • Full‑time

    Job function


  • Research, Analyst, and Information Technology

    • Industries

    • Computers and Electronics Manufacturing

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